• DocumentCode
    165662
  • Title

    The effects of using buffer layers on nanowire bonding and conductance properties of graphene based electronic devices

  • Author

    Udayakumar, N. ; Chakraborty, A. ; Irannejad, M. ; Cui, B. ; Brzezinski, A. ; Yavuz, M.

  • Author_Institution
    Waterloo Inst. for Nanotechnol., Univ. of Waterloo, Waterloo, ON, Canada
  • fYear
    2014
  • fDate
    18-21 Aug. 2014
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    Nanowire bonding and conductivity of the graphene based transistors at contact interfaces were investigated numerically. It was found that using MoS2 as a buffer layer provides the highest conductivity and smallest overall stress, which makes it preferable for graphene electronic device fabrication.
  • Keywords
    buffer layers; electrical conductivity; graphene; lead bonding; nanowires; transistors; MoS2; buffer layers effect; conductance property; contact interface; graphene electronic device fabrication; graphene transistor conductivity; nanowire bonding; Bonding; Buffer layers; Conductivity; Graphene; Stress; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
  • Conference_Location
    Toronto, ON
  • Type

    conf

  • DOI
    10.1109/NANO.2014.6968079
  • Filename
    6968079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=165662