A design of CMOS broadband amplifier with high-Q active inductor

Author

Yang, Jhy-Neng ; Cheng, Yi-Chang ; Lee, Chen-Yi

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsing-Chu, Taiwan

fYear

2003

Firstpage

86

Lastpage

89

Abstract

A CMOS broadband amplifier with high-Q active inductor using 0.25 μm CMOS process is presented. In this broadband amplifier, the compact high-Q active inductor is connected to the common-gate configuration to improve the performance of the high power gain, wide bandwidth, low power consumption and simple matching characteristics. Not using any passive inductor components is to be reduced the area of chip and the complexity. Advance Design System (ADS) simulator has been performed to verify the performance of the designed broadband amplifier. It has been shown that the amplifier has a 20 dB(S21) power gain in -3 dB bandwidth, S11 of -17 dB, S22 of -21 dB and noise figure (NF) of 8 dB under 2.5 V power supply with 18 mW power consumption.

Keywords

CMOS analogue integrated circuits; Q-factor; inductors; wideband amplifiers; 18 mW; 2.5 V; 8 dB; ADS simulator; CMOS broadband amplifier; advance design system; bandwidth -3 dB; common-gate configuration; high-Q active inductor; integrated passive inductor; passive inductor component; power consumption; power gain 20 dB; wide bandwidth; Active inductors; Bandwidth; Broadband amplifiers; CMOS process; Energy consumption; Noise figure; Noise measurement; Performance gain; Power amplifiers; Power supplies;

fLanguage

English

Publisher

ieee

Conference_Titel

System-on-Chip for Real-Time Applications, 2003. Proceedings. The 3rd IEEE International Workshop on

Print_ISBN

0-7695-1944-X

Type

conf

DOI

10.1109/IWSOC.2003.1213011

Filename

1213011