SiGe HBT technology: device and application issues

Author

Harame, D. ; Larson, L. ; Case, Michael ; Kovacic, S. ; Voinigescu, S. ; Tewksbury, T. ; Nguyen-Ngoc, D. ; Stein, K. ; Cressler, J. ; Jeng, S. ; Malinowski, J. ; Groves, R. ; Eld, E. ; Sunderland, D. ; Rensch, D. ; Gilbert, M. ; Schonenberg, K. ; Ahlgren,

Author_Institution

IBM Microelectron. Div., Hopewell Junction, NY, USA

fYear

1995

Firstpage

731

Lastpage

734

Abstract

SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of III-V HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. This paper will review the status of IBM´s SiGe HBT technology particularly focusing on some key device and application issues for high frequency circuit applications. In this work we review graded-base SiGe HBTs optimized for analog circuits and address four key issues: 1) BV_ceo constraints, 2) Transmission line loss, 3) Noise performance, and 4) Process integration leverage and issues. All of the hardware results are for self-aligned, polysilicon emitter, graded-base SiGe HBTs fabricated in a 200 mm semiconductor production line using the UHV/CVD technique for film growth

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; BiCMOS technology; SiGe; UHV/CVD film growth; analog circuits; bipolar technology; breakdown voltage; devices; high frequency circuits; noise; process integration; self-aligned polysilicon emitter graded-base SiGe HBTs; semiconductor production; transmission line loss; wireless applications; Analog circuits; BiCMOS integrated circuits; Constraint optimization; Distributed parameter circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Propagation losses; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499322

Filename

499322