Title :
High endurance ultra-thin tunnel oxide for dynamic memory application
Author :
Wann, Clement H J ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Ultra-thin tunnel oxide can conduct very high current through oxide via direct tunneling; charge-to-breakdown increases dramatically due to less oxide damage. These facts point to a possibility of using ultra-thin tunnel oxide in the floating-gate device structure for dynamic-memory applications. We chose MONOS structure in this study due to its immunity to defect-induced leakage and back-tunneling. The memory device exhibits fast WRITE/ERASE speed, high endurance, long data retention and non-destructive READ. Further improvements are expected through process optimization
Keywords :
DRAM chips; MOS memory circuits; electric breakdown; integrated circuit measurement; integrated circuit reliability; leakage currents; tunnelling; DRAMs; MONOS structure; back-tunneling; charge-to-breakdown; data retention; defect-induced leakage; direct tunneling; dynamic memory application; endurance; floating-gate device structure; nondestructive read; process optimization; ultra-thin tunnel oxide; write/erase speed; Application software; Capacitors; EPROM; Insulation; MONOS devices; Nonvolatile memory; Random access memory; Silicon; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499354
