• DocumentCode
    1658684
  • Title

    Efficient non-quasi-static MOSFETs model for circuit simulation

  • Author

    Dubois, Emmanuel ; Robilliart, Etienne

  • Author_Institution
    IEMN/ISEN, CNRS, Villeneuve d´´Ascq, France
  • fYear
    1995
  • Firstpage
    945
  • Lastpage
    948
  • Abstract
    A fast numerical resolution of the Poisson and current continuity equations is used to model non-quasi-static effects in MOS circuits under fast switching conditions. The resulting model is continuous over all regimes of operation and accounts for the non-instantaneous redistribution of the channel charge. The capabilities of this modelling approach are exemplified through the simulation of current mode analog circuits
  • Keywords
    MOSFET; MOSFET circuits; circuit analysis computing; semiconductor device models; MOS circuits; Poisson equations; channel charge; circuit simulation; current continuity equations; current mode analog circuits; fast switching conditions; nonquasi-static MOSFET model; Analog circuits; Charge carrier processes; Circuit simulation; Convergence; Degradation; Frequency; MOSFET circuits; Poisson equations; Predictive models; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499372
  • Filename
    499372
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658684