Title :
A physically based device model for fully depleted and nearly fully depleted SOI MOSFET
Author :
Banna, Srinivasa R. ; Chan, Philip C.H. ; Chan, Mansun ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
An accurate submicron MOSFET device model for Silicon-On-Insulator (SOI) technology suitable for analog as well as digital applications has been developed. In developing this model care has been taken in retaining the basic functional form of physical models while improving the model accuracy. In addition to the commonly included effects in the SOI MOSFET model, we have given careful consideration to source/drain parasitic resistance, kink effect, self-heating and model continuity. The accuracy of the model is validated with experimental data and found to be in good agreement
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; SOI MOSFET; Si; fully depleted devices; kink effect; model continuity; nearly fully depleted devices; physically based device model; self-heating; source/drain parasitic resistance; submicron MOSFET device model; CMOS technology; Immune system; Impact ionization; Intrusion detection; MOSFET circuits; Semiconductor device modeling; Surface resistance; Temperature; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499373
