Title :
Fully depleted 30-V-class thin-film SOI power MOSFET
Author :
Matsumoto, Satoshi ; Yachi, Toshiaki
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
Abstract :
A fully depleted 30-V-class thin-film SOI power MOSFET has been fabricated by the 1.0-μm-rule CMOS/SOI process using a SIMOX substrate. Its electrical characteristics were successfully demonstrated and the impact of the buried oxide thickness on the various electrical characteristics were discussed based on experimental and numerical results. The minimum specific on-resistance of the fabricated device was 66 mΩ·mm2 at a breakdown voltage of 32 V
Keywords :
MOSFET; SIMOX; buried layers; power MOSFET; 1 mum; 30 V; 32 V; CMOS/SOI process; SIMOX substrate; breakdown voltage; buried oxide thickness; drain current; electrical characteristics; fully depleted thin-film SOI power MOSFET; minimum specific on-resistance; numerical results; source-to-drain breakdown characteristics; subthreshold characteristics; Breakdown voltage; CMOS process; Electric variables; Fabrication; MOSFET circuits; Power MOSFET; Silicon on insulator technology; Substrates; Thin film devices; Transistors;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499380
