DocumentCode :
1659035
Title :
Nano-data storage and lithography by near-field optics
Author :
Gan, Fuxi ; Wei, Jingsong
Author_Institution :
Shanghai Inst. of Opt. & Fine Mech., Chinese Acad. of Sci., Shanghai, China
fYear :
2010
Firstpage :
162
Lastpage :
163
Abstract :
With the development of information, the density and capacity of information storage devices are required to be higher, and the smallest information bit size will be reduced to below the 100 nm accordingly. For the optical data storage and random access memory, the smallest bit size is mainly determined by the optical diffraction limit, which leads to some difficulties to get nanometric information bit by traditional far-field optics method. In order to realize the nano-data storage, one must break the optical diffraction barrier. In this report, we look back the develop story of optical storage, and give novel near-field optics methods for realizing the nano-data storage and nanolithography.
Keywords :
nanoelectronics; nanolithography; optical storage; random-access storage; information storage devices; nanodata storage; nanolithography; near-field optics method; optical data storage; optical diffraction limit; Apertures; High speed optical techniques; Lenses; Lithography; Optical devices; Optical diffraction; Optical films; Optical recording; Optical surface waves; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424600
Filename :
5424600
Link To Document :
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