Title :
Dispersion and anisotropy of Si´s third-order nonlinearity from 1.2 to 2.4 μm
Author :
Zhang, Jidong ; Lin, Qiang ; Agrawal, Govind P. ; Fauchet, Philippe M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY
Abstract :
We present the first detailed characterization, to the best of our knowledge, of wavelength and polarization dependence of two-photon absorption and the Kerr nonlinearity in silicon over a spectral range extending from 1.2 to 2.4 mum.
Keywords :
elemental semiconductors; infrared spectra; integrated optics; light polarisation; optical Kerr effect; optical dispersion; silicon; two-photon spectra; Kerr nonlinearity; Si; Si anisotropy; Si dispersion; polarization dependence; third-order nonlinearity; two-photon absorption; wavelength 1.2 mum to 2.4 mum; wavelength dependence; Anisotropic magnetoresistance; Geometrical optics; Nonlinear optics; Optical attenuators; Optical polarization; Optical pulse shaping; Optical scattering; Optical waveguides; Pulse measurements; Silicon;
Conference_Titel :
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-0934-1
DOI :
10.1109/GROUP4.2007.4347692
