Low loss optical modulator in a silicon waveguide based on a carrier depletion horizontal structure

Author

Marris-Morini, D. ; Vivien, L. ; Maine, S. ; Cassan, E. ; Laval, S. ; Lyan, P. ; Fédéli, J-M

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay

fYear

2007

Firstpage

1

Lastpage

3

Abstract

Experimental results on an all-silicon optical modulator integrated into a SOI micro-waveguide are reported. A boron doped layer is embedded in the intrinsic region of a PIN diode, and carrier depletion is obtained by applying a reverse bias on the diode. Contrast ratio about 10 dB and insertion loss of 5 dB have been measured. A 3 dB bandwidth larger than 1 GHz is obtained with a 4 mm long phase shifter in a Mach-Zehnder interferometer.

Keywords

Mach-Zehnder interferometers; elemental semiconductors; integrated optoelectronics; optical modulation; optical phase shifters; optical waveguides; p-i-n photodiodes; silicon; Mach-Zehnder interferometer; PIN diode; SOI microwaveguide; Si; all-silicon optical modulator; boron doped layer; carrier depletion; carrier depletion horizontal structure; loss 5 dB; low loss optical modulator; phase shifter; reverse biased diode; silicon waveguide; size 4 mm; Boron; Diodes; Insertion loss; Integrated optics; Loss measurement; Optical interferometry; Optical losses; Optical modulation; Optical waveguides; Silicon; microphotonics; optical modulation; silicon-on-insulator; waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2007 4th IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

978-1-4244-0934-1

Type

conf

DOI

10.1109/GROUP4.2007.4347713

Filename

4347713