DocumentCode :
1660283
Title :
Design, fabrication and performance of SO2 sensor based on LaF3 solid-electrolyte
Author :
Sun, Goliang ; Wang, Hairong ; Jiang, Zhuangde ; Yin, Tianshuo
Author_Institution :
State Key Lab. for Manuf. Syst. Eng., Xi´´an Jiaotong Univ., Xi´´an, China
fYear :
2010
Firstpage :
674
Lastpage :
675
Abstract :
LaF3 is attractive because of its possible application at room temperature, in addition to other advantages and it has been investigated for measuring various types of gases. A solid-state gas sensor with the structure of (working electrode) SO2,Pt/LaF3/Sn,SnF2 (reference electrode) was developed for detecting sulfur dioxide at room temperature. With numerical simulation, a series of working electrodes with different line widths were designed. Typical lift-off process was applied to produce the micro pattern of Pt working electrode layer on one side of the solid electrolyte (LaF3) wafer. The sensor cell was electrolysed in order to form SnF2 layer with about 3nm thickness at the interface between the Sn film and the LaF3 wafer. The EMF of the sensor was found to vary logarithmically with a change in sulfur dioxide partial pressure, following Nernst´s equation. Experiments show the working electrode with different line width somewhat influences on performance of the gas sensor. The sensing mechanism of the sulfur dioxide sensor was also investigated.
Keywords :
gas sensors; lanthanum compounds; microfabrication; numerical analysis; platinum; polishing; solid electrolytes; sputter deposition; sulphur compounds; tin; tin compounds; Nernst equation; Pt-LaF3-SnF2-Sn; SO2; lift-off process; numerical simulation; room temperature sulfur dioxide detection; sensor cell; sensor design; sensor fabrication; solid electrolyte wafer; solid-electrolyte; solid-state gas sensor; sulfur dioxide partial pressure; temperature 293 K to 298 K; working electrode layer; Electrodes; Equations; Fabrication; Gas detectors; Gases; Numerical simulation; Solid state circuits; Temperature sensors; Thick film sensors; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424644
Filename :
5424644
Link To Document :
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