• DocumentCode
    1661252
  • Title

    Numerical modeling of the CIGS thin film solar cell with varied defect density and Ga content

  • Author

    Zhou, Minchao ; Ye, Hao ; Fu, Yong ; Xiong, Dayuan ; Guo, Fangmin

  • Author_Institution
    Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
  • fYear
    2010
  • Firstpage
    277
  • Lastpage
    278
  • Abstract
    This work studies the different impacts of two main kind defects which determine the performance of Copper Indium Gallium Diselenide (CIGS) solar cells theoretically. The trend of capability with varied defect density and Ga content was investigated in detail. The deep defect results have been achieved, which are in accordance with the experimental data.
  • Keywords
    copper compounds; deep levels; defect states; gallium compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CIGS thin film solar cell; CuInxGa1-xSe2; copper indium gallium diselenide; defect density; Copper; Current density; Electric resistance; Gallium compounds; Indium; Numerical models; Optical films; Photonic band gap; Photovoltaic cells; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424684
  • Filename
    5424684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1661252