Organic-inorganic hybrid circuit with organic memory and MOSFET

In this paper, the organic-inorganic hybrid circuit is demonstrated with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au organic memory device and N-type MOSFET for nonvolatile memory application. The MOSFET is fabricated with 0.13-¿m CMOS technology. One transistor and one resistor (1T-1R) structure is fabricated in this hybrid circuit, in which the transistor is used as a select cell to limit the compliance current. The compliance current is determined by the transistor´s gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. The resistive ratio between the ON- and OFF-state is on the order of 10³.