DocumentCode
1661652
Title
Anti-bunching from plasmon induced non-blinking single CdSe/ZnS quantum dot
Author
Wu, Xiao-Weo ; Gong, Ming ; Dong, Chun-Hua ; Cui, Jin-Ming ; Yang, Yong ; Han, Zheng-Fu ; Guo, Guang-Can
Author_Institution
Key Lab. of Quantum Inf., Univ. of Sci. & Technol. of China, Hefei, China
fYear
2010
Firstpage
299
Lastpage
300
Abstract
CdSe/ZnS colloidal quantum dot generally exists blinking phenomenon during luminescence process, that remarkably influences its application as a single photon source. In this work, we used the effect of surface plasmon to effectively suppressed the blinking by locating quantum dot on gold film. The anti-bunching character was also observed with g(2)(0) as low as 0.34 at room temperature. Surface plasmon was shown to enhance the photoluminescence and reduce the lifetime of exciton, which was controlled by excitation power. Our result suggests a potential way to utilize CdSe/ZnS as a high efficient single photon emitter in optics.
Keywords
II-VI semiconductors; cadmium compounds; colloids; excitons; gold; photoluminescence; semiconductor quantum dots; surface plasmons; wide band gap semiconductors; zinc compounds; Au; CdSe-ZnS; anti-bunching; colloidal quantum dot; exciton lifetime; gold film; nonblinking single quantum dot; photoluminescence; semiconductor quantum dots; single photon emitter; single photon source; surface plasmon; temperature 293 K to 298 K; Excitons; Gold; Luminescence; Optical films; Photoluminescence; Plasmons; Quantum dots; Stimulated emission; Temperature; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424700
Filename
5424700
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