• DocumentCode
    1661652
  • Title

    Anti-bunching from plasmon induced non-blinking single CdSe/ZnS quantum dot

  • Author

    Wu, Xiao-Weo ; Gong, Ming ; Dong, Chun-Hua ; Cui, Jin-Ming ; Yang, Yong ; Han, Zheng-Fu ; Guo, Guang-Can

  • Author_Institution
    Key Lab. of Quantum Inf., Univ. of Sci. & Technol. of China, Hefei, China
  • fYear
    2010
  • Firstpage
    299
  • Lastpage
    300
  • Abstract
    CdSe/ZnS colloidal quantum dot generally exists blinking phenomenon during luminescence process, that remarkably influences its application as a single photon source. In this work, we used the effect of surface plasmon to effectively suppressed the blinking by locating quantum dot on gold film. The anti-bunching character was also observed with g(2)(0) as low as 0.34 at room temperature. Surface plasmon was shown to enhance the photoluminescence and reduce the lifetime of exciton, which was controlled by excitation power. Our result suggests a potential way to utilize CdSe/ZnS as a high efficient single photon emitter in optics.
  • Keywords
    II-VI semiconductors; cadmium compounds; colloids; excitons; gold; photoluminescence; semiconductor quantum dots; surface plasmons; wide band gap semiconductors; zinc compounds; Au; CdSe-ZnS; anti-bunching; colloidal quantum dot; exciton lifetime; gold film; nonblinking single quantum dot; photoluminescence; semiconductor quantum dots; single photon emitter; single photon source; surface plasmon; temperature 293 K to 298 K; Excitons; Gold; Luminescence; Optical films; Photoluminescence; Plasmons; Quantum dots; Stimulated emission; Temperature; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424700
  • Filename
    5424700