• DocumentCode
    1661705
  • Title

    Theoretical aspects of photon emission from a single quantum dot nanocavity system

  • Author

    Shan, Guangcun ; Huang, Wei ; Zhang, Miao

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2010
  • Firstpage
    303
  • Lastpage
    303
  • Abstract
    In this work, we investigate the aspects of photon emitted from a single quantum dot exciton, strongly coupled to a planar nanocavity, from which the exact spectrum is derived. By using the rigorous medium-dependent theory of fully quantized cavity-QED formulas, the exact spectrum is reduced to two separate forms, in terms of the leaky cavity mode emission and the radiation mode emission. In the strong coupling regime, it is concluded that several new effects should be associated with the leaky cavity mode emission, including the appearance of an off-resonance cavity mode and a loss-induced on-resonance spectral triplet. The cavity mode emission is shown to completely dominate the emitted spectrum, even for large cavity-exciton detunings, whereby the usual cavity-QED formulas developed for radiation-mode emission drastically fail. These predictions are in qualitative agreement with several observations reported in recent experiments, and apply to a wide range of semiconductor nanocavity photonic devices.
  • Keywords
    excitons; photoluminescence; quantum electrodynamics; semiconductor quantum dots; cavity-QED formulas; cavity-exciton detunings; leaky cavity mode emission; medium dependent theory; photon emission; planar nanocavity; radiation mode emission; semiconductor nanocavity photonic devices; single quantum dot exciton; single quantum dot nanocavity system; Displays; Informatics; Information technology; Laboratories; Nanoscale devices; Organic electronics; Organic materials; Photonics; Quantum dots; Quantum mechanics; nanocavity; photonic devices; quantum dot;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424703
  • Filename
    5424703