DocumentCode
1661857
Title
Characteristics of an electrically pumped GaN-based microcavity light emitter with an AlN current blocking layer
Author
Cheng, Bo-Siao ; Wu, Tzeng-Tsong ; Lai, Ying-You ; Wu, Yun-Lin ; Chen, Cheng-Hung ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; microcavity lasers; optical pumping; quantum well lasers; surface emitting lasers; wide band gap semiconductors; AlN; InGaN-GaN; MCLE; VCSEL; current blocking layer; microcavity light emitter; multiple quantum wells; optical confinement layer; Apertures; Gallium nitride; Optical devices; Optical reflection; Stimulated emission; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6325962
Link To Document