Title :
Characteristics of an electrically pumped GaN-based microcavity light emitter with an AlN current blocking layer
Author :
Cheng, Bo-Siao ; Wu, Tzeng-Tsong ; Lai, Ying-You ; Wu, Yun-Lin ; Chen, Cheng-Hung ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We demonstrate a GaN-based microcavity light emitter (MCLE) with an AlN current blocking layer. An AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; microcavity lasers; optical pumping; quantum well lasers; surface emitting lasers; wide band gap semiconductors; AlN; InGaN-GaN; MCLE; VCSEL; current blocking layer; microcavity light emitter; multiple quantum wells; optical confinement layer; Apertures; Gallium nitride; Optical devices; Optical reflection; Stimulated emission; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
