A method to determine the thermal dependence of large and small signal equivalent circuit parameters of GaAs FETs

Author

Pesare, Marcello ; Giorgio, Agostino ; Perri, Anna Gina

Author_Institution

Dipt. di Elettrotecnica ed Elettronica, Politeenico di Bari, Italy

Volume

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

197

Abstract

In this paper a 2-D I-V MESFET model coupled with a 3-D thermal model is presented. The thermal dependence of the velocity-electric field expression proposed by Chang et al. (1986), has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all the physical parameters involved both in the electric thermal model has been taken into account

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; thermal analysis; 2D I-V MESFET model; 3D thermal model; GaAs; GaAs FETs; channel temperature; coupled electrothermal simulation; device characteristics; device self-heating; equivalent circuit parameters; small-signal parameters; thermal dependence; velocity-electric field expression; Electrothermal effects; Equations; Equivalent circuits; FETs; Fingers; Gallium arsenide; MESFETs; Temperature dependence; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on

Print_ISBN

0-7803-7057-0

Type

conf

DOI

10.1109/ICECS.2001.957714

Filename

957714