• DocumentCode
    1662056
  • Title

    Indirectly pumped THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

  • Author

    Yamanishi, Masamichi ; Fujita, Kazuue ; Furuta, Shinichi ; Edamura, Tadataka ; Tanaka, Kazunori

  • Author_Institution
    Central Res. Labs., Hamamatsu Photonics KK, Hamamatsu, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present the operation of indirectly pumped InGaAs/InAlAs THz quantum-cascade lasers of which active/injector structures were grown by MOVPE. A laser exhibits a low threshold-current-density of ~560 A/cm2 at 7 K and a Tmax~84 K.
  • Keywords
    MOCVD; aluminium compounds; current density; gallium arsenide; indium compounds; infrared sources; optical pumping; quantum cascade lasers; semiconductor growth; terahertz wave devices; vapour phase epitaxial growth; InGaAs-InAlAs; MOVPE; THz quantum-cascade lasers; active-injector structures; metal-organic vapor-phase epitaxy; temperature 7 K; threshold-current-density; Indium gallium arsenide; Laser excitation; Pump lasers; Quantum cascade lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1662056