CESL deposition promoting n/p MOSFETs under 45-nm-node process fabrication

In this study, the process technology of contact-etching stop-layer (CESL) with LPCVD or PECVD is performed by interlayer-dielectric-SiN_x stressing layer to form the tensile or compressive strained n/p MOSFETs. Because the strain effect on MOSFET devices is finite, the promoting performance of source/drain current is increased more while the channel lengths of the devices are decreased more. This phenomenon is obviously observed with devices, width/length=W/L= 10/10 and 10/.08 (μm/μm). Moreover, the trend evidence for tensile strain benefited to nMOSFETs and pMOSFETs, but for compressive strain favoring pMOSFTEs and not hugely degrading nMOSFETs, is also achieved.