DocumentCode
1662996
Title
The influence of model parameters on accurate IMD simulations in HBTs
Author
Wong, P. ; Pejcinovic, B.
Author_Institution
Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
Volume
1
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
381
Abstract
Nominal transistor model parameters are often insufficiently precise to accurately predict intermodulation distortion (IMD) behavior in individual heterojunction bipolar transistors (HBTs). A procedure for optimizing the model parameters to achieve a more accurate simulation of IMD performance is presented. Measured IMD data for silicon-germanium HBTs of differing emitter sizes are compared to IMD simulations to illustrate the optimization process
Keywords
Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; intermodulation distortion; semiconductor device models; semiconductor materials; HBTs; IMD simulations; SiGe; emitter sizes; heterojunction bipolar transistors; intermodulation distortion behavior; optimization process; transistor model parameters; Analytical models; Computational modeling; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Intermodulation distortion; Predictive models; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2001. ICECS 2001. The 8th IEEE International Conference on
Print_ISBN
0-7803-7057-0
Type
conf
DOI
10.1109/ICECS.2001.957759
Filename
957759
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