Characterization of IGBT devices for use in series resonant inverter for induction heating applications

Author

Cases, C. ; Jordán, J. ; Magraner, J.M. ; Esteve, V. ; Dede, E. ; Sanchis, E. ; Maset, E. ; Ferreres, A. ; Ejea, J.B. ; Gumbau, Eva

Author_Institution

GH Electrotermia, Valencia, Spain

fYear

2009

Firstpage

1

Lastpage

8

Abstract

This paper aims to determine the maximum frequency achievable in a 25 kW series inverter for induction heating applications and to compare, in hard switching conditions, four fast transistors IGBTs 600 A and 1200 V modules encapsulated in 62 mm from different suppliers. The comparison has been done at 25 and 125degC in a set-up. Important differences between modules have been obtained depending on the die temperature.

Keywords

induction heating; insulated gate bipolar transistors; resonant invertors; IGBT devices; current 600 A; hard switching conditions; induction heating applications; power 25 kW; series resonant inverter; temperature 125 degC; temperature 25 degC; voltage 1200 V; Circuit testing; Control systems; Frequency response; Insulated gate bipolar transistors; RLC circuits; Resonance; Resonant inverters; Semiconductor diodes; Switching loss; Temperature control; IGBT; Induction heating; MOSFET; Resonant converter;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278855