Growth of semi-polar (101̄3) AlN films on the silicon

Author

Jhong, Shih-Bin ; Lee, Maw-Shung ; Wu, Sean ; Liu, Kuan-Ting ; Lin, Zhi-Xun ; Lai, Yi-Shao ; Yang, PingFeng

Author_Institution

Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan

fYear

2010

Firstpage

96

Lastpage

99

Abstract

Highly semi-polar (101̅3) oriented and fine structural AlN films were successfully prepared on silicon substrate by rf magnetron sputtering in this research. The dependence of the nitrogen concentrations and the material characteristics of the films (crystalline structure and micro morphology) were investigated. The crystalline structure of the films was determined by X-ray diffraction (XRD) and the surface microstructure of films was quantitatively investigated using an atomic force microscope (AFM). Different nitrogen concentrations (50%, 58%, 67% and 75%) were used to deposit the films. As decreasing the nitrogen concentrations, the XRD intensity of the semi-polar (101̅3) oriented increases, the crystallite size of the films increases and the roughness of top surface decreases. The experimental results demonstrate that the highly semi-polar (101̅3) oriented AlN films appeared at the lower nitrogen concentration.

Keywords

X-ray diffraction; aluminium compounds; atomic force microscopy; semiconductor thin films; sputtering; AlN; X-ray diffraction; atomic force microscope; crystalline structure; micro morphology; rf magnetron sputtering; semi-polar films; surface microstructure; Chemicals; Nitrogen; Silicon; Substrates; Surface morphology; Surface treatment; X-ray scattering; (101̄3) oriented; AlN; semi-polar;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2010 International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4244-6693-1

Type

conf

DOI

10.1109/ISNE.2010.5669191

Filename

5669191