Title :
Ion implant damage detection by surface photovoltage
Author :
Lowell, John ; Wenner, Valerie ; Wagner, Dennis ; Anjum, Mohammed
Author_Institution :
Adv. Micro Devices Inc., Austin, TX, USA
Abstract :
In this paper we report on the application of optical surface photovoltage (SPV) to both quantify and qualify amorphous layers and/or lattice damage due to ion implantation to CZ P-type silicon. We will show how the technique can be used for post-anneal measurement of residual damage
Keywords :
ion implantation; CZ P-type silicon; Si; amorphous layers; ion implantation; lattice damage; optical surface photovoltage; post-anneal measurement; residual damage; CMOS technology; Implants; Ion implantation; Lattices; Length measurement; Monitoring; Optical filters; Optical surface waves; Particle beam optics; Pollution measurement;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop. 1994 IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-2053-0
DOI :
10.1109/ASMC.1994.588286
