• DocumentCode
    1663964
  • Title

    Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors

  • Author

    Zhang, Wenqi ; Huang, Liuying ; Li, Aidong ; Shao, Qiyue ; Wu, Di

  • Author_Institution
    Mater. Sci. & Eng. Dept., Nanjing Univ., Nanjing, China
  • fYear
    2010
  • Firstpage
    66
  • Lastpage
    68
  • Abstract
    Hafnium-based dielectrics have been extensively investigated as a possible replacement for SiO2. Anhydrous Hf/Zr mixed-metal nitrate precursor HfxZr1-x(NO3)4 (HZN) was successfully synthesized and hafnium zirconate (HfxZr1-O2) thin films were prepared by the chemical vapor deposition (CVD) technique from this precursor. The basal dielectric properties of HfxZr1-O2 films were studied, and C-V curves with negligible hysteresis are achieved.
  • Keywords
    chemical vapour deposition; dielectric hysteresis; dielectric thin films; hafnium compounds; materials preparation; Hf0.7Zr0.3O2; anhydrous mixed-metal nitrate precursor; hafnium zirconate thin films; hafnium-based dielectrics; single-source precursor; thin film chemical vapor deposition; Annealing; Films; Anhydrous mixed-metal nitrate; Chemical vapor deposition (CVD); HfxZr1−O2; High-k materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2010 International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4244-6693-1
  • Type

    conf

  • DOI
    10.1109/ISNE.2010.5669199
  • Filename
    5669199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1663964