Numerical analysis of destruction modes in IGBT chips

Author

Knipper, U. ; Pfirsch, F. ; Raker, T. ; Niedermeyr, J. ; Wachutka, G.

Author_Institution

Inst. for Phys. of Electrotechnol., Tech. Univ. Munich, Munich, Germany

fYear

2009

Firstpage

1

Lastpage

4

Abstract

In IGBTs avalanche breakdown usually sets on in the edge termination structure. In consequence of electrical crosstalk, the destruction mechanism in very thin devices is confined to the neighboring cells in the active part of the chip. Thus, in order to achieve the largest possible safe-operating area, design optimization has to focus on the edge termination structure and the neighboring active cells in its vicinity.

Keywords

avalanche breakdown; insulated gate bipolar transistors; numerical analysis; power semiconductor devices; semiconductor device noise; semiconductor device reliability; IGBT chips; avalanche breakdown; destruction modes; edge termination structure; electrical crosstalk; insulated gate bipolar transistors; neighboring active cells; numerical analysis; Avalanche breakdown; Breakdown voltage; Computational modeling; Current measurement; Doping profiles; Insulated gate bipolar transistors; Numerical analysis; Physics; Robustness; Uniform resource locators; IGBT; bipolar device; discrete power device; reliability; robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278871