The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells

Author

Yang, Hung-Jen ; Wu, Chien-Liang ; Huang, Chian-Fu ; Chen, Chun-Heng ; Chen, Yi-Chan ; Lee, Wen-Cheng

Author_Institution

Adv. Silicon Solar Cell Div. Thin -Film Solar cell Dept., Green Energy & Environ. Res. Labs., Hsinchu, Taiwan

fYear

2010

Firstpage

59

Lastpage

60

Abstract

For achieving higher performance of amorphous silicon thin film solar cell, the front-contact ZnO:Al is needed to be concerned. In this paper, we focus on how the front contact ZnO:Al influences the a-Si:H thin film solar cell. In order to understand the relationship between the front-contact ZnO:Al and device, we establish a model to simulate how the feature size of the textured ZnO:Al influence the haze and short-circuit current. Moreover we introduce the anneal effect on a-Si:H thin film solar cell.

Keywords

aluminium compounds; amorphous semiconductors; annealing; elemental semiconductors; etching; semiconductor thin films; short-circuit currents; solar cells; zinc compounds; Si:H; ZnO:Al; amorphous silicon thin film; annealing; etching; front contact; short-circuit current; solar cells; Solids; ZnO:Al; a-Si:H; annealing; component; etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2010 International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4244-6693-1

Type

conf

DOI

10.1109/ISNE.2010.5669201

Filename

5669201