Over-current turn-off failure in high voltage IGBT modules under clamped inductive load

Author

Perpiñà, X. ; Serviere, J.F. ; Jordà, X. ; Hidalgo, S. ; Urresti-Ibañez, J. ; Rebollo, J. ; Mermet-Guyennet, M.

Author_Institution

Centre Nac. de Microelectron. (IMB-CNM-CSIC), Barcelona, Spain

fYear

2009

Firstpage

1

Lastpage

10

Abstract

Considering typical conditions of railway traction applications, this paper presents an experimental and simulative analysis of over-current turn-off failure in IGBT devices packaged in parallel within IGBT multichip modules. Extensive experimental analysis is carried out by means of a dedicated test-circuit. Thus, for greater insight, electro-thermal simulations at device level have been carried out. The results show that mismatches in the electro-thermal properties of the IGBT device during transient operation can lead to uneven power dissipation, significantly enhancing the risk of failure.

Keywords

insulated gate bipolar transistors; multichip modules; power semiconductor devices; railways; traction; IGBT multichip modules; clamped inductive load; electro-thermal simulations; high voltage IGBT modules; over-current turn-off failure; power dissipation; railway traction; transient operation; Diodes; Electrothermal effects; Failure analysis; Insulated gate bipolar transistors; Multichip modules; Packaging; Pulse width modulation inverters; Rail transportation; Thermal management; Voltage; IGBT turn-off; Railway applications; electrothermal modelling; failure; power semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278891