• DocumentCode
    1664544
  • Title

    A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from −55 to 125°C

  • Author

    Souri, Kamran ; Chae, Youngcheol ; Makinwa, Kofi

  • Author_Institution
    Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2012
  • Firstpage
    208
  • Lastpage
    210
  • Abstract
    This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2nd-order ΔΣ conversion.
  • Keywords
    CMOS integrated circuits; calibration; radiofrequency identification; temperature sensors; RFID tags; coarse SAR conversion; energy efficiency; energy-efficient CMOS temperature sensor; improved charge-balancing scheme; temperature -15 degC; temperature -55 degC to 125 degC; temperature 15 degC; voltage-calibrated inaccuracy; zoom ADC; Calibration; Capacitors; Energy efficiency; Energy resolution; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-4673-0376-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.2012.6176978
  • Filename
    6176978