Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

Author

Giakos, G.C. ; Guntupalli, R. ; Shah, N. ; Vedantham, S. ; Suryanarayanan, S. ; Chowdhury, S. ; Patnekar, N. ; Sumrain, S. ; Mehta, K.

Author_Institution

Imaging Devices, Sensors & Intelligence Based Sensor Fusion Lab., Akron Univ., OH, USA

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

475

Abstract

The intrinsic sensitivity of Cd_1-xZn_xTe semiconductor detectors have been theoretically modeled and experimentally measured, within the X-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd_1-xZn_xTe detectors exhibit good intrinsic sensitivity.

Keywords

II-VI semiconductors; X-ray detection; cadmium compounds; diagnostic radiography; image enhancement; zinc compounds; Cd_1-xZn_xTe; X-ray diagnostic energy range; detector signal parameters; digital radiographic imaging; image enhancement; intrinsic sensitivity; solid state ionization devices; Diagnostic radiography; Energy measurement; Optical imaging; Signal detection; Solid state circuits; Tellurium; X-ray detection; X-ray detectors; X-ray imaging; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2002. IMTC/2002. Proceedings of the 19th IEEE

ISSN

1091-5281

Print_ISBN

0-7803-7218-2

Type

conf

DOI

10.1109/IMTC.2002.1006888

Filename

1006888