Efficient simulation for silicon-on-insulator waveguide electro-optic devices

Author

Sun, DeGui ; Hall, Trevor J. ; Vandusen, Rob ; Tarr, T. Garry

Author_Institution

Centre for Res. in Photonics, Univ. of Ottawa, Ottawa, ON, Canada

fYear

2011

Firstpage

45

Lastpage

46

Abstract

This paper simulates the modulation efficiency and response time of free-carrier dispersion (FCD) effect on silicon-on-insulator (SOI) waveguide electro-optic (EO) devices using professional software called MEDICI. The dependence of free-carrier concentration on the applied voltage and device parameters and the corresponding response time are obtained, typically supporting a ~10¹⁹ cm^-3 concentration variation and a 10-30ns response time at 1.5-2.0V voltage.

Keywords

carrier density; electro-optical devices; integrated optics; optical dispersion; optical modulation; optical waveguides; physics computing; silicon-on-insulator; MEDICI software; Si; device parameters; electro-optic devices; free-carrier concentration; free-carrier dispersion; modulation efficiency; response time; silicon-on-insulator waveguide; Doping; Electrooptic effects; Electrooptical waveguides; Modulation; Silicon; Time factors; FCD; SOI waveguide; doping density; modulation efficiency of free carriers; response time of modulation process;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on

Conference_Location

Rome

ISSN

2158-3234

Print_ISBN

978-1-61284-876-1

Electronic_ISBN

2158-3234

Type

conf

DOI

10.1109/NUSOD.2011.6041129

Filename

6041129