Title :
An accurate transistor model for simulating avalanche-breakdown effects in Si bipolar circuits
Author :
Rickelt, M. ; Rein, H.M.
Author_Institution :
Ruhr-Univ., Bochum, Germany
fDate :
6/23/1905 12:00:00 AM
Abstract :
A physics-based scalable transistor model is described which allows one to consider accurately avalanche-breakdown effects in bipolar circuit simulation. It consists of 6 lumped transistor elements, connected via elements of the base and emitter resistance, and can be applied to arbitrary transistor geometries
Keywords :
avalanche breakdown; bipolar integrated circuits; circuit simulation; elemental semiconductors; integrated circuit modelling; semiconductor device breakdown; semiconductor device models; silicon; Si; arbitrary transistor geometries; avalanche-breakdown effects; base resistance; bipolar circuits; circuit simulation; emitter resistance; lumped transistor elements; physics-based scalable transistor model; Bipolar transistor circuits; Bipolar transistors; Circuit simulation; Driver circuits; Electric breakdown; Electronic mail; Geometry; Power generation; Solid modeling; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957852
