Title :
Characteristics of ultrathin dielectric films (<5 nm) grown or annealed in a nitric oxide ambient using rapid thermal processing
Author :
Yao, Z.-Q. ; Harrison, H.B. ; Dimitrijev, S. ; Yeow, Y.T.
Author_Institution :
AWA Microelectron., Homebush, NSW, Australia
Abstract :
In this paper we report on the physical properties, such as thickness measurements and XPS depth profiles, and electrical properties of NO-grown gate dielectrics and compare them with films of similar thicknesses grown in N2O and O2. The interface state densities, interface state generation rate during electrical stress, charge trapping properties and stress induced leakage current are presented. In addition, electrical and physical properties of NO-annealed oxides which had an initial oxide and then were annealed in nitric oxide are included
Keywords :
CMOS integrated circuits; MOS capacitors; X-ray photoelectron spectra; dielectric thin films; interface states; leakage currents; nitridation; rapid thermal processing; silicon compounds; 5 nm; CMOS devices; I-V characteristics; MOS capacitors; NO ambient; NO-annealed oxides; SiOxNy films; SiON; XPS depth profiles; charge trapping properties; electrical properties; electrical stress; interface state densities; interface state generation rate; rapid thermal processing; stress induced leakage current; thickness measurements; ultrathin dielectric films; Australia; Conductive films; Dielectric films; Microelectronics; Nitrogen; Optical films; Rapid thermal annealing; Semiconductor films; Stress measurement; Thickness measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499640
