Title :
QUBiC4: a silicon RF-BiCMOS technology for wireless communication ICs
Author :
Szmyd, D. ; Brock, R. ; Bell, N. ; Harker, S. ; Patrizi, G. ; Fraser, J. ; Dondero, R.
Author_Institution :
Philips Semicond., Albuquerque, NM, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
QUBiC4 is a silicon RF-BiCMOS technology with NPN ft/f max up to 40/100 GHz, 0.25 μm CMOS, high quality passives, and five metal layers for wireless applications. LNA noise figure of 0.99 dB at 2 GHz has been achieved
Keywords :
BiCMOS integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; elemental semiconductors; integrated circuit noise; silicon; 0.25 micron; 0.99 dB; 100 GHz; 2 GHz; 40 GHz; CMOS; IC noise; LNA; QUBiC4; RF-BiCMOS technology; Si; metal layers; wireless communication ICs; CMOS process; CMOS technology; Capacitance; Communications technology; Implants; Inductors; Integrated circuit interconnections; Noise figure; Silicon; Wireless communication;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957857
