Modelling of a symmetrical bipolar monolithic bidirectional switch

Author

Phung, Luong Viêt ; Ihuel, François ; Batut, Nathalie ; Quoirin, Jean-Baptiste ; Schellmanns, Ambroise ; Ventura, Laurent

Author_Institution

Lab. de Microelectron. de Puissance, Univ. de Tours, Tours, France

fYear

2009

Firstpage

1

Lastpage

9

Abstract

The purpose of this paper is to introduce a new concept of symmetrical power bipolar junction transistor for appliances applications with low forward voltage (< 1 V). Design and static simulations are discussed as well as the potential electrical impact of silicon hydrophobic direct wafer bonding used to realize such a device. Simulations results, for a nominal current of 5 A and a breakdown voltage of 500 V, are compared with existent solutions.

Keywords

bipolar transistor switches; domestic appliances; elemental semiconductors; power bipolar transistors; power semiconductor switches; semiconductor device breakdown; semiconductor device models; silicon; appliances applications; breakdown voltage; current 5 A; electrical impact; forward voltage; power bipolar junction transistor; silicon hydrophobic direct wafer bonding; static simulations; symmetrical bipolar monolithic bidirectional switch; voltage 500 V; Electric potential; Energy barrier; Germanium silicon alloys; Heterojunctions; P-n junctions; Packaging; Silicon germanium; Switches; Threshold voltage; Wafer bonding; A.C. Switch; Bidirectional switch; Current gain; Hydrophobic silicon direct wafer bonding; Interfacial defects; Power dissipation; Shielding effect; Symmetrical bipolar junction transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-4432-8

Electronic_ISBN

978-90-75815-13-9

Type

conf

Filename

5278934