Title :
A Non-Isothermal Device Simulator for Mosfet Analysis
Author :
Hayashi, H. ; Ryo Deng
Author_Institution :
College of Engineering, Hosei University, Tokyo, Japan
Keywords :
Analytical models; MOSFET circuits;
Conference_Titel :
Electromagnetic Field Computation, 1992. Digest of the Fifth Biennial IEEE Conference on
Conference_Location :
Claremont, CA, USA
DOI :
10.1109/CEFC.1992.720726
