Title :
Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior
Author :
Solaro, Y. ; Fonteneau, P. ; Legrand, Charles-Alexandre ; Marin-Cudraz, David ; Passieux, Jeremy ; Guyader, Pascal ; Clement, Laurent-Renaud ; Fenouillet-Beranger, C. ; Ferrari, P. ; Cristoloveanu, S.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Innovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices.
Keywords :
electrostatic discharge; field effect transistors; silicon-on-insulator; transient response; BBC-T; CDM time domain behavior; UTBB-FDSOI; Z2-FET; back gate coupling; front gate coupling; innovative ultra-thin body and buried oxide FDSOI protections; size 28 nm; static leakage control; static triggering control; thin-body ESD protections; transient behavior; transient responses; Random access memory; Silicon compounds; Solids;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
