Title :
Study on the structural and photoluminescence properties of Er-doped ZnO films
Author :
Wei, Guoke ; Wang, Jinliang ; Xu, Hengxing ; Tang, Ning ; Fan, Chao
Author_Institution :
Dept. of Phys., Beihang Univ., Beijing, China
Abstract :
ZnO films and their Er-doped films oriented in c-axis were prepared on silicon substrate (100) by frequency magnetron sputtering method, and they were taken in heat treatment. Then, the influences on the surface morphologies and crystal structures of the film samples, which were made by the different annealing temperatures and doping concentrations, were analyzed through observing the treatment of SEM and XRD. Their luminescence properties were observed by photoluminescence spectra. The results show that Er-doping enhanced the room temperature UV emission of films. The sample has the strongest luminescence intensity, when the annealing temperature is 800°C and the doping concentration is 2%.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; crystal structure; doping profiles; erbium; photoluminescence; scanning electron microscopy; semiconductor doping; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; SEM; Si; XRD; ZnO:Er; annealing; crystal structure; doping concentration; films; frequency magnetron sputtering; heat treatment; photoluminescence spectra; room temperature UV emission; surface morphology; temperature 293 K to 298 K; temperature 800 degC; Annealing; Doping; Frequency; Luminescence; Photoluminescence; Semiconductor films; Silicon; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424906
