DocumentCode
1667239
Title
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface
Author
Shibata, Naotaka ; Kanda, K. ; Hisada, Takashi ; Isobe, Keisuke ; Sato, Mitsuhisa ; Shimizu, Yukiyo ; Shimizu, Tsuyoshi ; Sugimoto, Taku ; Kobayashi, Takehiko ; Inuzuka, Katsumi ; Kanagawa, Naoki ; Kajitani, Y. ; Ogawa, Tomomi ; Nakai, J. ; Iwasa, Koyo ;
Author_Institution
Toshiba, Yokohama, Japan
fYear
2012
Firstpage
422
Lastpage
424
Abstract
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Recently, there are two different directions to meet market demands. One is lowering bit cost and increase memory density to the utmost limit, which is achieved by 4b/cell [1] or 3b/cell [2]. The other is focusing on high performance and high reliability. To meet both demands, we develop a 19nm 112.8mm2 64Gb 2b/cell NAND flash memory with the smallest die size ever reported. 15MB/s programming throughput and 400Mb/s/pin 1.8V Toggle Mode interface [3] are achieved for the first time. Die Micrograph and features are shown in Figure 25.1.1.
Keywords
NAND circuits; flash memories; integrated circuit reliability; NAND flash memory; USB devices; bit cost; camcorders; cell phones; die micrograph; digital cameras; flash markets; flash-memory-die densities; market demands; memory size 64 GByte; multilevel flash memory; size 19 nm; solid-state drives; toggle mode interface; voltage 1.8 V; Computer architecture; Flash memory; Layout; Microprocessors; Nonvolatile memory; Programming; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4673-0376-7
Type
conf
DOI
10.1109/ISSCC.2012.6177073
Filename
6177073
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