• DocumentCode
    166745
  • Title

    Effect of process technology variation on ESD clamp parameters

  • Author

    Tazzoli, Augusto ; Vashchenko, Vladislav ; Shibkov, Andrei

  • Author_Institution
    Maxim Integrated Corp., San Jose, CA, USA
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Mixed-mode simulation approach is used to investigate the effect of process variations on ESD clamps parameters. Statistical analyses, validated by experimental results, are used to reveal which process and design parameters have the largest effect on an avalanche diode BV and NLDMOS-SCR Vt1, and predict the overall device parameter distribution in a 130 nm technology.
  • Keywords
    avalanche diodes; electrostatic discharge; semiconductor device reliability; semiconductor technology; thyristors; ESD clamp parameters; NLDMOS-SCR; avalanche diode; device parameter distribution; mixed mode simulation; process technology variation; size 130 nm; Anodes; Clamps; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166745