DocumentCode :
166745
Title :
Effect of process technology variation on ESD clamp parameters
Author :
Tazzoli, Augusto ; Vashchenko, Vladislav ; Shibkov, Andrei
Author_Institution :
Maxim Integrated Corp., San Jose, CA, USA
fYear :
2014
fDate :
7-12 Sept. 2014
Firstpage :
1
Lastpage :
7
Abstract :
Mixed-mode simulation approach is used to investigate the effect of process variations on ESD clamps parameters. Statistical analyses, validated by experimental results, are used to reveal which process and design parameters have the largest effect on an avalanche diode BV and NLDMOS-SCR Vt1, and predict the overall device parameter distribution in a 130 nm technology.
Keywords :
avalanche diodes; electrostatic discharge; semiconductor device reliability; semiconductor technology; thyristors; ESD clamp parameters; NLDMOS-SCR; avalanche diode; device parameter distribution; mixed mode simulation; process technology variation; size 130 nm; Anodes; Clamps; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
ISSN :
0739-5159
Type :
conf
Filename :
6968807
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=166745
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