DocumentCode
166749
Title
Junction engineering for SOI SCR triggering and performance improvement
Author
You Li ; Junjun Li ; Gauthier, R.
Author_Institution
Semicond. R&D Center, IBM, Essex Junction, VT, USA
fYear
2014
fDate
7-12 Sept. 2014
Firstpage
1
Lastpage
8
Abstract
Junction engineering solutions are presented in this work to improve the triggering and performance of SCR devices in an advanced 22nm SOI CMOS technology. Several SCR cathode junction formations are investigated including implants energy, dosage, with or without halo/extension implants. TLP and HBM results are presented in details.
Keywords
CMOS integrated circuits; cathodes; semiconductor junctions; silicon-on-insulator; thyristors; HBM; SCR cathode junction formations; SOI CMOS technology; SOI SCR performance improvement; SOI SCR triggering; TLP; halo-extension implants; junction engineering solutions; size 22 nm; Cathodes; Electrostatic discharges; Immune system; Implants; Junctions; Performance evaluation; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location
Tucson, AZ
ISSN
0739-5159
Type
conf
Filename
6968809
Link To Document