• DocumentCode
    166752
  • Title

    Electrical Overstress robustness and test method for ICs

  • Author

    Kamdem, Alain ; Martin, Patrick ; Lefebvre, Jean-Luc ; Berthet, Fanny ; Domenges, B. ; Guillot, Phillipe

  • Author_Institution
    Lab. Commun, Normandie Univ., Caen, France
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    With electronics technology improvements, Electrical OverStress (EOS) failures due to Over Voltage Stress (OVS) event became the current issue instead of ElectroStatic Discharge (ESD). To better specify devices Absolute Maximum Rating (AMR), this study deepens the knowledge of robustness threshold and helps understanding failure mechanisms on ICs components besides ESD.
  • Keywords
    electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; AMR; EO failures; ESD; ICs components; OVS; absolute maximum rating; electrical overstress robustness threshold; electrostatic discharge; failure mechanisms; overvoltage stress; test method; Degradation; Earth Observing System; Electrostatic discharges; Failure analysis; Integrated circuits; Robustness; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166752