Title :
Novel sol-gel derived SONOS-type nanocrystal memory
Author :
Wu, Chi-Chang ; You, Hsin-Chiang ; Ko, Fu-Hsiang ; Yang, Wen-Luh
Author_Institution :
Dept. Of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V; the retention times were extrapolated up to 106 sec for about 5% and 10% charge loss at 25 and 85°C measurement, respectively. The voltage shift after 104 program/erase cycles is less than 1 V. The good electrical performance was attributed to the effects of the high-density isolated NCs.
Keywords :
flash memories; liquid phase deposition; nanoelectronics; nanofabrication; nanostructured materials; random-access storage; rapid thermal annealing; sol-gel processing; spin coating; SONOS-type nanocrystal memory; charge loss; charge retention; charge storage layer; electrical properties; endurance; flash memory; germanium tetrachloride; high-density isolated nanocrystals; memory window; mixed tetrachloride solution; nickel tetrachloride; nonvolatile memory; post rapid thermal annealing process; program-erase speed; silicon tetrachloride; sol-gel spin coating method; temperature 25 degC; temperature 85 degC; voltage shift; zirconium tetrachloride; Annealing; Charge measurement; Current measurement; Germanium; Loss measurement; Nanocrystals; Nickel; Silicon; Voltage; Zirconium;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424933
