DocumentCode
1667971
Title
Nanocrystalline TiO2 thin films prepared by electron beam evaporation for photodetector applications
Author
Huang, Huolin ; Xie, Yannan ; Wu, Zhengyun
Author_Institution
Dept. of Phys., Xiamen Univ., Xiamen, China
fYear
2010
Firstpage
1222
Lastpage
1223
Abstract
TiO2 thin films were deposited on quartz substrates by electron beam evaporation and then annealed at 700°C for 1 h in air for the photodetector applications. Various characterization techniques were used to study the properties of the films. X-ray diffraction (XRD) and Raman results indicated that the post-annealed films exhibited single anatase phase and the grain size was 78 nm. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) images showed that the films were smooth and compact. The UV-vis transparency spectra and photoluminescence (PL) spectra were applied to analyze the optical properties and emission features of the films. These results suggest the TiO2 thin films prepared in our experiments are a promising candidate material for the photodetector applications.
Keywords
Raman spectra; X-ray diffraction; annealing; atomic force microscopy; electron beam deposition; grain size; nanofabrication; nanostructured materials; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; titanium compounds; transparency; ultraviolet spectra; vacuum deposited coatings; vacuum deposition; visible spectra; Raman shifts; SiO2; TiO2; UV-vis transparency spectra; X-ray diffraction; atomic force microscopy; electron beam evaporation; grain size; nanocrystalline thin films; optical properties; photodetector; photoluminescence spectra; post-deposition annealing; scanning electron microscopy; single anatase phase; temperature 700 degC; time 1 h; Annealing; Atomic force microscopy; Electron beams; Optical films; Photodetectors; Scanning electron microscopy; Sputtering; X-ray diffraction; X-ray imaging; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424941
Filename
5424941
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