In-vacuum resonant tunneling in the nanopentode

Nanopentode device fabrication process and predicted characteristics are presented. The fabrication process involves a combination of reaction ion etching and wet etching. The fabricated device structure makes it possible to simultaneously create an in-vacuum potential-energy barrier and well, creating a gaseous-state device similar in some respects to the solid-state resonant tunneling diode. The calculated transmission probability for electrons through the entire cathode-anode gap, in a one-dimensional approximation, shows resonances at certain gate-voltage arrangement. This strengthens the possibility of observing quantum interference effects in multiple-gate vacuum microelectronic devices.