• DocumentCode
    1668148
  • Title

    Enhancement of ordering and perpendicular magnetic properties of CoPt films by adding Ag underlayer

  • Author

    Shen, C.L. ; Kuo, P.C. ; Li, Y.S. ; Lin, G.P. ; Huang, K.T. ; Chen, S.C.

  • Author_Institution
    Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    507
  • Lastpage
    508
  • Abstract
    CoPt/Ag films were prepared by magnetron sputtering on glass substrates and subsequent annealing. The dependence of ordering degree and magnetic properties on Ag film thickness and annealing conditions were investigated. It was found that the Ag underlayer played a dominant role in inducing the (001) texture of the CoPt film after annealing. CoPt films with a thickness about 20 nm and Ag underlayers with a thickness about 70 nm are easy to obtain a well ordering degree and a perpendicular magnetic anisotropy after annealing at 700 °C for 30 min. CoPt/Ag films with a large perpendicular coercivity in the range of 13.5-14.0 kOe and a perpendicular squareness of 0.97 were obtained after annealing at 700 °C for 30 min. Ag underlayer is beneficial to enhance the perpendicular coercivity (Hc¿) and perpendicular squareness (S¿) of CoPt film significantly. The ordering degree and perpendicular magnetic properties of the CoPt films which deposited on Ag underlayer are larger than those of the single layer CoPt films.
  • Keywords
    annealing; cobalt alloys; coercive force; gold; magnetic anisotropy; magnetic thin films; platinum alloys; sputter deposition; texture; (001) texture; Ag underlayer; CoPt-Ag; annealing; glass substrates; large perpendicular coercivity; magnetron sputtering; perpendicular magnetic anisotropy; perpendicular squareness; single thin films; subsequent annealing; temperature 700 degC; time 30 min; Annealing; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic properties; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Sputtering; Substrates; Superconducting films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424949
  • Filename
    5424949