DocumentCode
1668359
Title
A 125 MHz burst-mode flexible read-while-write 256 Mbit 2b/c 1.8V NOR flash memory
Author
Villa, C. ; Vimercati, D. ; Schippers, S. ; Confalonieri, E. ; Sforzin, M. ; Polizzi, S. ; Placa, M. La ; Lisi, C. ; Magnavacca, A. ; Bolandrina, E. ; Martinelli, A. ; Dima, V. ; Scavuzzo, A. ; Calandrino, B. ; Gatto, N. Del ; Scardaci, M. ; Mastroianni,
Author_Institution
ST-Microelectron., Agrate Brianza, Italy
fYear
2005
Firstpage
52
Abstract
A 1.8 V 256 Mb 2b/cell NOR flash memory is designed in a 130 nm technology. A fast gate-voltage-ramp constant-current-reading concept is implemented to obtain a robust read-while-write/erase function and 125 MHz burst read frequency.
Keywords
NOR circuits; flash memories; 1.8 V; 125 MHz; 130 nm; 256 Mbit; NOR flash memory; burst read frequency; burst-mode flash memory; fast gate-voltage-ramp constant-current-reading method; flexible read-while-write flash memory; read-while-write/erase function; Costs; Flash memory; Frequency; Matrix converters; Memory architecture; Regulators; Silicon; Threshold voltage; Throughput; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
0-7803-8904-2
Type
conf
DOI
10.1109/ISSCC.2005.1493864
Filename
1493864
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