Title :
Explaining the reduced floating body effects in narrow channel SOI MOSFETs
Author :
Pretet, J. ; Subba, N. ; Ioannou, D. ; Cristoloveanu, S. ; Maszara, W. ; Raynaud, C.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
We focus on the floating body effects (FBEs) in narrow channel SOI MOSFETs such as saturation subthreshold swing, breakdown voltage and single transistor latch-up. We find that all improve as the channel width decreases and examine the mechanisms causing this improvement. We demonstrate experimently and by simulation, that the reduced FBEs in narrow channel devices are caused by dopant outdiffusion and lifetime reduction along the channel edges.
Keywords :
MOSFET; carrier lifetime; diffusion; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; silicon-on-insulator; FBEs; breakdown voltage; channel edges; channel width effect; dopant outdiffusion; lifetime reduction; narrow channel SOI MOSFETs; reduced floating body effects; saturation subthreshold swing; single transistor latch-up; Breakdown voltage; Charge carrier lifetime; Condition monitoring; Doping profiles; Isolation technology; Linear predictive coding; MOSFETs; Numerical simulation; Threshold voltage; Voltage measurement;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957967
