Field emission properties of diamond cone arrays formed by plasma etching

Author

Wang, Q. ; Wang, Z.L. ; Xu, P. ; Jin, A.Z. ; Quan, B.G. ; Cui, Z. ; Gu, C.Z.

Author_Institution

Beijing Nat. Laboratory for Condensed Matter Phys., Chinese Acad. of Sci., Beijing, China

fYear

2005

Abstract

In this work, we have formed diamond cone arrays by plasma etching of diamond film without masking. Diamond film was grown on Si (100) substrate by hot-filament chemical vapor deposition (HFCVD) method using the mixture of CH₄ and H₂. Scanning electrons microscopy (SEM) was used to study the morphology of as-formed diamond cone arrays. Micro Raman spectroscopy was used to characterize the phase purity of the diamond film before and after etching. Field emission properties of diamond films with different cone densities were also studied.

Keywords

Raman spectra; chemical vapour deposition; diamond; electron field emission; elemental semiconductors; scanning electron microscopy; semiconductor growth; semiconductor thin films; C; HFCVD; Raman spectroscopy; SEM; Si; cone densities; diamond cone arrays; field emission; hot-filament chemical vapor deposition; phase purity; plasma etching; scanning electrons microscopy; Chemical vapor deposition; Etching; Morphology; Plasma applications; Plasma chemistry; Plasma properties; Raman scattering; Scanning electron microscopy; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619570

Filename

1619570