0.15 /spl mu/m SOI DRAM technology incorporating sub-volt dynamic threshold devices for embedded mixed-signal & RF circuits

Author

Goldman, D. ; DeGregorio, K. ; Kim, C.S. ; Nielson, M. ; Zahurak, J. ; Parke, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., ID, USA

fYear

2001

Firstpage

97

Lastpage

98

Abstract

This paper describes the DC and high frequency characteristics of a low-cost, 0.15 /spl mu/m PDSOI DRAM technology. A compact dynamic threshold (DT) device design in this process is found to be superior to both grounded body (GB) and floating body (FB) PD-SOI MOSFETs. This device achieves kink-free behavior, with gm=936 /spl mu/S/um, g/sub out/=36 /spl mu/S/um, Ion/Ioff=210 /spl mu/A/0.1 pA, S=67 mV/dec, and fmax=32 GHz at V/sub DD/=1 V. These DTMOS devices are excellent for sub-volt embedded baseband and IF circuits and sufficient for RF front-end circuits, thus enabling the combination of embedded DRAM, digital, analog and RF circuit cores in, ultra-low-power, low-cost SOCs.

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; DRAM chips; elemental semiconductors; integrated circuit measurement; low-power electronics; mixed analogue-digital integrated circuits; silicon; silicon-on-insulator; 0.15 micron; 1 V; 32 GHz; CMOS; DC characteristics; DTMOS devices; IF circuits; MOSFETs; PD-SOI DRAM technology; RF circuit cores; RF circuits; RF front-end circuits; SOI DRAM technology; analog cores; compact dynamic threshold device; digital cores; embedded DRAM; embedded mixed-signal circuits; floating body; grounded body; high frequency characteristics; kink-free behavior; low-cost; sub-volt dynamic threshold devices; sub-volt embedded baseband circuits; ultra-low power low-cost SOCs; Baseband; Circuit testing; MOS devices; MOSFETs; Parasitic capacitance; Process design; Radio frequency; Random access memory; System testing; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.958004

Filename

958004