Worst case conditions for hot-carrier induced degradation of sub-100 nm partially depleted SOI MOSFET´s

We have studied the hot-carrier behavior of sub-100 nm PD SOI MOSFET´s under various conditions of stress. It is observed that VG=VD and VG=Isubmax are both important regimes to be considered for the worst case degradation scenario depending on the drain bias. We have also shown that, while floating body may provide a slightly lower lifetime compared to body tied devices at low drain biases, as the drain bias is increased, this difference is no longer observed.